ssf5ns65ud 650v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 5 i d @ tc = 100c continuous drain current, v gs @ 10v 3.2 i dm pulsed drain current 15 a power dissipation 50 w p d @tc = 25c linear derating factor 0.4 w/c v ds drain-source voltage 650 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=22.4mh 54 mj i ar avalanche current @ l=22.4mh 2.2 a t j t stg operating junction and storage temperature range -55 to +150 c v dss 650v r ds (on) 0.74 (typ.) i d 5a to-252 (dpak) marking and pin assignment schematic diagram ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? lead free product the ssf5ns65ud series mosfets is a new technology, which combines an innovative super junction technology and advance process. this new technology achieves low r ds(on) , energy saving, high reliability and uniformity, superior power density and space saving.
ssf5ns65ud 650v n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 2.5 /w r ja junction-to-ambient (t 10s) 75 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 650 v v gs = 0v, i d = 250a 0.74 1.0 v gs =10v,i d = 1a r ds(on) static drain-to-source on-resistance 1.54 t j = 125c 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.2 v t j = 125c 1 v ds = 650v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 8.1 q gs gate-to-source charge 2.4 q gd gate-to-drain("miller") charge 2.8 nc i d = 4a, v ds =100v, v gs = 10v t d(on) turn-on delay time 9.0 t r rise time 5.9 t d(off) turn-off delay time 23 t f fall time 11 ns v gs =10v, v ds =200v, r gen =12.2,i d =1.9a c iss input capacitance 336 c oss output capacitance 18 c rss reverse transfer capacitance 2.8 pf v gs = 0v v ds = 100v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 5 a i sm pulsed source current (body diode) 15 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.83 1.2 v i s =2.8a, v gs =0v t rr reverse recovery time 105 ns q rr reverse recovery charge 514 nc t j = 25c, i f = 1.9a, di/dt = 100a/s
ssf5ns65ud 650v n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c
ssf5ns65ud 650v n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
ssf5ns65ud 650v n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6. typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance junction-to-case
ssf5ns65ud 650v n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 mechanical data min nom max min nom max a 2.200 - 2.400 0.087 - 0.094 b 0.950 - 1.250 0.037 - 0.049 b 0.500 - 0.700 0.020 - 0.028 b1 0.450 - 0.550 0.018 - 0.022 c 0.450 - 0.550 0.018 - 0.022 d 6.450 - 6.750 0.254 - 0.266 d1 5.200 - 5.400 0.205 - 0.213 e 5.950 - 6.250 0.234 - 0.246 e1 2.240 - 2.340 0.088 - 0.092 e2 4.430 - 4.730 0.174 - 0.186 l1 9.450 - 9.950 0.372 - 0.392 l2 1.250 - 1.750 0.049 - 0.069 l3 0.600 - 0.900 0.024 - 0.035 k 0.000 - 0.100 0.000 - 0.004 symbol dimension in millimeters dimension in inches to-252 package outline dimension
ssf5ns65ud 650v n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: ssf5ns65ud package (available) to-252(dpak) operating temperature range c : -55 to 150 oc devices per unit options reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices tapes/inner units/inner inner units/carton box box boxes/carton box box to-252 2500 2 5000 7 35000 to-252 2500 1 2500 10 25000 to-252 800 5 4000 8 32000 package type units/tape
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